Effects of Ir electrodes on the dielectric constants of Ba0.5Sr0.5TiO3 films

被引：28

作者：

Cha, SY ^{[1
]}

Jang, BT ^{[1
]}

Lee, HC ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期

关键词：

DRAM; BST; electrode; Ir; Pt; dielectric constant; stress; lattice parameter;

D O I：

10.1143/JJAP.38.L49

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of an iridium (Ir) electrode on the properties of Ba0.5Sr0.5TiO3 (BST) films were studied, in comparison with a conventional platinum (Pt) electrode. It was found that the dielectric constant of BST films is strongly dependent on the electrode material. The BST films deposited on an Ir bottom electrode were preferentially oriented and showed higher dielectric constants than those on Pt. Higher dielectric constants of the BST films could also be obtained by using Ir instead of Pt as a top electrode material, which was explained as being due to the compressive stress in the BST film induced by the Ir top electrode.

引用

页码：L49 / L51

页数：3

共 10 条

[1] ELECTRICAL COMPARISON OF SOL-GEL DERIVED LEAD-ZIRCONATE-TITANATE CAPACITORS WITH IR AND PT ELECTRODES [J].

AOKI, K ;

FUKUDA, Y ;

NUMATA, K ;

NISHIMURA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5250-5253

[2] PLATINUM BOTTOM ELECTRODES FORMED BY ELECTRON-BEAM EVAPORATION FOR HIGH THIN-FILMS [J].

CHA, SY ;

LEE, HC ;

LEE, WJ ;

KIM, HG .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5220-5223

[3] Iridium thin film as a bottom electrode for high dielectric (Ba,Sr)TiO3 capacitors [J].

Cha, SY ;

Jang, BT ;

Kwak, DH ;

Shin, CH ;

Lee, HC .

INTEGRATED FERROELECTRICS, 1997, 17 (1-4) :187-195

[4] FERROELECTRIC MEMORIES [J].

DEARAUJO, CAP ;

MCMILLAN, LD ;

MELNICK, BM ;

CUCHIARO, JD ;

SCOTT, JF .

FERROELECTRICS, 1990, 104 :241-256

[5]

EICHORST DJ, 1994, P 5 INT S INT FERR C, P239

[6]

Evans J.T., 1998, IEEE J SOLID-ST CIRC, V23, P1171

[7] Novel ferroelectric epitaxial (Ba,Sr)TiO3 capacitor for deep sub-micron memory applications [J].

Kawakubo, T ;

Abe, K ;

Komatsu, S ;

Sano, K ;

Yanase, N ;

Mochizuki, H .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :695-698

[8] PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON ELECTRODES INCLUDING IRO2 [J].

NAKAMURA, T ;

NAKAO, Y ;

KAMISAWA, A ;

TAKASU, H .

APPLIED PHYSICS LETTERS, 1994, 65 (12) :1522-1524

[9] EFFECTS OF ANNEAL AMBIENTS AND PT THICKNESS ON PT/TI AND PT/TI/TIN INTERFACIAL REACTIONS [J].

OLOWOLAFE, JO ;

JONES, RE ;

CAMPBELL, AC ;

HEGDE, RI ;

MOGAB, CJ ;

GREGORY, RB .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1764-1772

[10] EPITAXIAL-GROWTH AND DIELECTRIC-PROPERTIES OF BATIO3 FILMS ON PT ELECTRODES BY REACTIVE EVAPORATION [J].

YANO, Y ;

IIJIMA, K ;

DAITOH, Y ;

TERASHIMA, T ;

BANDO, Y ;

WATANABE, Y ;

KASATANI, H ;

TERAUCHI, H .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :7833-7838

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