Growth of AlInN on (111)GaAs substrates

被引：22

作者：

Guo, QX ^{[1
]}

Okada, A ^{[1
]}

Kidera, H ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Fac Sci & Engn, Saga 8408502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 11B期

关键词：

AlInN; GaAs substrate; reactive sputtering; low-temperature growth; X-ray diffraction; surface morphology;

D O I：

10.1143/JJAP.39.L1143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ternary AlInN is grown on (111)GaAs substrates by reactive radio-frequency magnetron sputtering using aluminum and indium targets in an ambient of argon and nitrogen. Highly c-axis-oriented films with a wurtzite structure are obtained. It is revealed that the composition of AlInN layers can be controlled by changing the ratio of the sputtered area of the aluminum plate to that of the indium plate.

引用

页码：L1143 / L1145

页数：3

共 15 条

[1] GROWTH OF ALXIN1-XN SINGLE-CRYSTAL FILMS BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YOSHIDA, A .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :462-466

[2]

GUO QX, 1994, P SOC PHOTO-OPT INS, V2364, P362, DOI 10.1117/12.190782

[3] CRYSTAL-STRUCTURE AND ORIENTATION OF ALXIN1-XN EPITAXIAL LAYERS GROWN ON (0001)ALPHA-AL2O3 SUBSTRATES [J].

GUO, QX ;

ITOH, N ;

OGAWA, H ;

YOSHIDA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4653-4657

[4] Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy [J].

Kariya, M ;

Nitta, S ;

Yamaguchi, S ;

Kato, H ;

Takeuchi, T ;

Wetzel, C ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (6B) :L697-L699

[5] Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition [J].

Kim, KS ;

Saxler, A ;

Kung, P ;

Razeghi, M ;

Lim, KY .

APPLIED PHYSICS LETTERS, 1997, 71 (06) :800-802

[6] EPITAXIAL-GROWTH AND PROPERTIES OF ALXGA1-XN BY MOVPE [J].

KOIDE, Y ;

ITOH, H ;

SAWAKI, N ;

AKASAKI, I ;

HASHIMOTO, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (09) :1956-1960

[7] PREPARATION AND PROPERTIES OF III-V NITRIDE THIN-FILMS [J].

KUBOTA, K ;

KOBAYASHI, Y ;

FUJIMOTO, K .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :2984-2988

[8]

MATSUOKA T, 1990, INST PHYS CONF SER, P141

[9] PROPERTIES OF GA1-XINXN FILMS PREPARED BY MOVPE [J].

NAGATOMO, T ;

KUBOYAMA, T ;

MINAMINO, H ;

OMOTO, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1334-L1336

[10] Band gap bowing and refractive index spectra of polycrystalline AlxIn1-xN films deposited by sputtering [J].

Peng, T ;

Piprek, J ;

Qiu, G ;

Olowolafe, JO ;

Unruh, KM ;

Swann, CP ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 1997, 71 (17) :2439-2441

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