The dry etching of group III nitride wide-bandgap semiconductors

被引：39

作者：

Gillis, HP ^{[1
]}

Choutov, DA ^{[1
]}

Martin, KP ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,CTR MICROELECTR RES,ATLANTA,GA 30332

来源：

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1996年 / 48卷 / 08期

关键词：

D O I：

10.1007/BF03223028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sidewalls. Results obtained by standard methods are summarized, and the extent of concomitant ion-bombardment damage is assessed. A new low-damage technique-low-energy electron-enhanced etching-that avoids ion bombardment altogether is described, and early results for III-N materials are summarized. Etching issues critical in forming contacts and fabrication laser facets and mirrors are highlighted, and some prospects for future work are also identified.

引用

页码：50 / 55

页数：6

共 70 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].

ADESIDA, I ;

MAHAJAN, A ;

ANDIDEH, E ;

KHAN, MA ;

OLSEN, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2777-2779

[2] CHARACTERISTICS OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE [J].

ADESIDA, I ;

PING, AT ;

YOUTSEY, C ;

DOW, T ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :889-891

[3] HYDROGENATION OF P-TYPE GALLIUM NITRIDE [J].

BRANDT, MS ;

JOHNSON, NM ;

MOLNAR, RJ ;

SINGH, R ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2264-2266

[4] ANOMALOUS MU+ PRECESSION IN SILICON [J].

BREWER, JH ;

CROWE, KM ;

GYGAX, FN ;

JOHNSON, RF ;

PATTERSON, BD ;

FLEMING, DG ;

SCHENCK, A .

PHYSICAL REVIEW LETTERS, 1973, 31 (03) :143-146

[5] HYDROGEN DESORPTION AND AMMONIA ADSORPTION ON POLYCRYSTALLINE GAN SURFACES [J].

CHIANG, CM ;

GATES, SM ;

BENSAOULA, A ;

SCHULTZ, JA .

CHEMICAL PHYSICS LETTERS, 1995, 246 (03) :275-278

[6] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[7]

EDDY CR, 1996, MRS P, V395

[8]

Estreicher S. K., 1995, Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), P78

[9]

ESTREICHER SK, 1995, MAT SCI ENG R, V14, P1

[10]

FANG Z, 1996, APPL PHYS LETT, V68, P1672

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