The dry etching of group III nitride wide-bandgap semiconductors

被引：39

作者：

Gillis, HP ^{[1
]}

Choutov, DA ^{[1
]}

Martin, KP ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,CTR MICROELECTR RES,ATLANTA,GA 30332

来源：

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1996年 / 48卷 / 08期

关键词：

D O I：

10.1007/BF03223028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sidewalls. Results obtained by standard methods are summarized, and the extent of concomitant ion-bombardment damage is assessed. A new low-damage technique-low-energy electron-enhanced etching-that avoids ion bombardment altogether is described, and early results for III-N materials are summarized. Etching issues critical in forming contacts and fabrication laser facets and mirrors are highlighted, and some prospects for future work are also identified.

引用

页码：50 / 55

页数：6

共 70 条

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