Synthesis of MgxNi1-xO thin films with a band-gap in the solar-blind region

被引：21

作者：

Ji, ZG ^{[1
]}

He, ZP ^{[1
]}

Liu, K ^{[1
]}

Zhao, SC ^{[1
]}

He, ZJ ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat Mat Sci & Engn, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 273卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

UV detection; sol-gel; MgxNi1-xO films; solar-blind;

D O I：

10.1016/j.jcrysgro.2004.09.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MgxNi1-xO thin films with a band-gap of 4.98 eV were Successfully prepared on quartz Substrates by sol-gel method. XPS, XRD ineasureirient results showed that MgXNi1-XO films with cubic NiO Structure were formed at 1000degreesC. UV-visible absorption results showed that the absorption edges of the films varied as the amount of Mg2+ changed. The film with x=0.3 showed a band-gap of 4.98eV, which implies possible application for solar-blind UV detection. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：446 / 450

页数：5

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