Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE

Composition-graded InxGa1-xN Multiple Quantum Wells were deposited on single wafers using a novel growth technique called temperature gradient Organometallic Vapor Phase Epitaxy. A large temperature gradient, 710-785degreesC, was imposed on 2" sapphire substrates while growing seven period InxGa1-xN Multiple Quantum Well structures. Photoluminescence results show that high quality films, with variations in emission peak from 2.3 to 3.0 eV as a function of position, can be deposited on a single wafer. Photo-modulated transmission was used to determine band-edge optical transition as a means to obtain indium concentration as a function of position. Atomic Force Microscopy was used to image the morphology and relate indium concentrations to film microstructure and optical quality. This is a novel technique that uses a temperature gradient during Organometallic Vapor Phase Epitaxy for depositing variable emission wavelength devices on single wafers. (C) 2003 Elsevier B.V. All rights reserved.