Synthesis, structure, and multiply enhanced field-emission properties of branched ZnS nanotube - In nanowire core-shell heterostructures

被引:182
作者
Gautam, Ujjal K. [1 ,2 ]
Fang, Xiaosheng [1 ,2 ]
Bando, Yoshio [1 ]
Zhan, Jinhua [3 ]
Golberg, Dmitri [1 ,2 ]
机构
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, World Premier Int Res Ctr, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, Nanoscale Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[3] Shandong Univ, Dept Chem, Key Lab Colloid & Interface Chem, Jinan 250100, Peoples R China
关键词
core-shell nanostructure; 1D heterostructure; hierarchical structure; aligned nanowire; field emission; growth mechanism;
D O I
10.1021/nn800013b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the synthesis of a novel core-shell metal-semiconductor heterostructure where In forms the core nanowire and wurtzite ZnS forms the shell nanotube. In addition, controlled reaction conditions result in the growth of secondary quasi-aligned ZnS nanowires as numerous branches on the shell nanotubes. These hierarchical architectures are attractive for two reasons: (i) the sharp and quasi-aligned ZnS tips of the nanostructures; are potential field-emitters and (ii) since In in bulk form is superconducting the synthesis of core In nanowires should now pave the way for further investigations on magnetic versus transport behavior in type-1 superconductors at the nanoscale. The synthesis could be achieved by employing a rapidly heating carbothermal chemical vapor deposition technique and a high reaction temperature. Transmission electron microscopy reveals that the core In nanowires are single crystals, whereas, within a hierarchical shell, the stem and the branches are separated with a crystalline interface. Field-emission measurements demonstrate remarkably large field enhancement which is explained on the basis of a sequential stepwise enhancement mechanism involving the consecutive stem and branch contributions. The present new nanoarchitectures are envisaged to be an important candidate for potential nanoelectronic devices.
引用
收藏
页码:1015 / 1021
页数:7
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