Fabrication of silica-shielded Ga-ZnS metal-semiconductor nanowire heterojunctions

被引：60

作者：

Hu, JQ

Bando, Y

Zhan, JH

Golberg, D

机构：

[1] NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 16期

关键词：

D O I：

10.1002/adma.200500317

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ga-ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermo-chemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga-ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.

引用

页码：1964 / +

页数：7

共 37 条

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