Fabrication of silica-shielded Ga-ZnS metal-semiconductor nanowire heterojunctions

被引：60

作者：

Hu, JQ

Bando, Y

Zhan, JH

Golberg, D

机构：

[1] NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 16期

关键词：

D O I：

10.1002/adma.200500317

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ga-ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermo-chemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga-ZnS interface is particularly sensitive to electron-beam irradiation (EBI), making possible an EBI-driven switch.

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页码：1964 / +

页数：7

相关论文

共 37 条

[11] Nanothermodynamic analysis of surface effect on expansion characteristics of Ga in carbon nanotubes [J].

Gao, YH ;

Bando, Y .

APPLIED PHYSICS LETTERS, 2002, 81 (21) :3966-3968

[12] Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomerates [J].

Gole, JL ;

Stout, JD ;

Rauch, WL ;

Wang, ZL .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2346-2348

[13] Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].

Gudiksen, MS ;

Lauhon, LJ ;

Wang, J ;

Smith, DC ;

Lieber, CM .

NATURE, 2002, 415 (6872) :617-620

[14] Nanowires, nanobelts and related nanostructures of Ga2O3 [J].

Gundiah, G ;

Govindaraj, A ;

Rao, CNR .

CHEMICAL PHYSICS LETTERS, 2002, 351 (3-4) :189-194

[15] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].

Han, WQ ;

Fan, SS ;

Li, QQ ;

Hu, YD .

SCIENCE, 1997, 277 (5330) :1287-1289

[16] Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes [J].

Hu, JQ ;

Zhang, Y ;

Meng, XM ;

Lee, CS ;

Lee, ST .

SMALL, 2005, 1 (04) :429-438

[17] Fabrication of germanium-filled silica nanotubes and aligned silica nanofibers [J].

Hu, JQ ;

Meng, XM ;

Jiang, Y ;

Lee, CS ;

Lee, ST .

ADVANCED MATERIALS, 2003, 15 (01) :70-+

[18] Epitaxial heterostructures: Side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires [J].

Hu, JQ ;

Bando, Y ;

Liu, ZW ;

Sekiguchi, T ;

Golberg, D ;

Zhan, JH .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (37) :11306-11313

[19] Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires [J].

Hu, JT ;

Ouyang, M ;

Yang, PD ;

Lieber, CM .

NATURE, 1999, 399 (6731) :48-51

[20] Logic gates and computation from assembled nanowire building blocks [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lauhon, LJ ;

Kim, KH ;

Lieber, CM .

SCIENCE, 2001, 294 (5545) :1313-1317

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