Free-electron-laser near-field nanospectroscopy

被引:39
作者
Cricenti, A
Generosi, R
Perfetti, P
Gilligan, JM
Tolk, NH
Coluzza, C
Margaritondo, G
机构
[1] CNR, Ist Stuttura Mat, I-00133 Rome, Italy
[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[3] Univ Rome La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[4] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.121739
中图分类号
O59 [应用物理学];
学科分类号
摘要
First experiments at the Vanderbilt free electron lasers measured the local reflectivity of a PtSi/Si system. The reflectivity in the scanning near-field optical microscope images revealed features that were not present in the corresponding shear-force (topology) images and which were due to localized changes in the bulk properties of the sample. The size of the smallest detected features clearly demonstrated that near-field conditions were reached. The use of different photon wavelengths (0.653, 1.2, and 2.4 mu m) enabled us to probe regions of different depth. (C) 1998 American Institute of Physics.
引用
收藏
页码:151 / 153
页数:3
相关论文
共 10 条
[1]   Novel spectromicroscopy: Pt-GaP studies by spatially resolved internal photoemission with near-field optics [J].
Almeida, J ;
Orto, TD ;
Coluzza, C ;
Margaritondo, G ;
Bergossi, O ;
Spajer, M ;
Courjon, D .
APPLIED PHYSICS LETTERS, 1996, 69 (16) :2361-2363
[2]   COMBINED SHEAR FORCE AND NEAR-FIELD SCANNING OPTICAL MICROSCOPY [J].
BETZIG, E ;
FINN, PL ;
WEINER, JS .
APPLIED PHYSICS LETTERS, 1992, 60 (20) :2484-2486
[3]   SPATIALLY LOCALIZED ENERGY SHIFTS IN THE PHOTOEMISSION SPECTROSCOPY OF INSULATORS [J].
COLUZZA, C ;
ALMEIDA, J ;
DELLORTO, T ;
GOZZO, F ;
ALMERAS, P ;
BERGER, H ;
BOUVET, D ;
DUTOIT, M ;
CONTARINI, S ;
MARGARITONDO, G .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) :3710-3713
[4]   INTERFACE MEASUREMENTS OF HETEROJUNCTION BAND LINEUPS WITH THE VANDERBILT FREE-ELECTRON LASER [J].
COLUZZA, C ;
TUNCEL, E ;
STAEHLI, JL ;
BAUDAT, PA ;
MARGARITONDO, G ;
MCKINLEY, JT ;
UEDA, A ;
BARNES, AV ;
ALBRIDGE, RG ;
TOLK, NH ;
MARTIN, D ;
MORIERGENOUD, F ;
DUPUY, C ;
RUDRA, A ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1992, 46 (19) :12834-12836
[5]  
COLUZZA C, 1997, P SOC PHOTO-OPT INS, V2782, P591
[6]   AIR OPERATING ATOMIC FORCE-SCANNING TUNNELING MICROSCOPE SUITABLE TO STUDY SEMICONDUCTORS, METALS, AND BIOLOGICAL SAMPLES [J].
CRICENTI, A ;
GENEROSI, R .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (04) :2843-2847
[7]  
CRICENTI A, UNPUB
[8]   BAND BENDING AT SEMICONDUCTOR INTERFACES AND ITS EFFECT ON PHOTOEMISSION LINE-SHAPES [J].
MARGARITONDO, G ;
GOZZO, F ;
COLUZZA, C .
PHYSICAL REVIEW B, 1993, 47 (15) :9907-9909
[9]  
Pohl DW, 1992, NATO ASI SERIES, V262
[10]  
YUNCEL E, 1993, PHYS REV LETT, V70, P4146