Contraction of aluminum oxide thin layers in optical heterostructures

被引：15

作者：

Durand, O

Wyckzisk, F

Olivier, J

Magis, M

Galtier, P

De Rossi, A

Calligaro, M

Ortiz, V

Berger, V

Leo, G

Assanto, G

机构：

[1] Thales Res & Technol, F-91400 Orsay, France

[2] Univ Paris 07, F-75251 Paris, France

[3] Univ Roma Tre, Natl Inst Phys Matter, NOOEL, I-00146 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1612893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with selective oxidation of AlAs/GaAs epitaxial heterostructures. The average thickness of each layer was determined via x-ray reflectometry before and after oxidation, yielding an induced shrinkage of 11.4%+/-0.7% normal to the stack. The waveguide refractive indices were evaluated via modal-index measurements in the near-infrared. The achieved accuracy is compatible with form-birefringent phase matching in AlGaAs guided-wave frequency converters. (C) 2003 American Institute of Physics.

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页码：2554 / 2556

页数：3

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