Vapor-solid growth of Sn nanowires: Growth mechanism and superconductivity

被引:101
作者
Hsu, YJ [1 ]
Lu, SY [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30043, Taiwan
关键词
D O I
10.1021/jp046354k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A noncatalytic and template-free vapor transport process has been employed to prepare single-crystalline Sn nanowires with diameters of 10-20 nm. The growth of one-dimensional Sn nanowires follows the mechanism similar to the vapor-solid (V-S) mechanism. Two-dimensional square-shaped nanostructures were also found to form in the region of lower deposition temperatures. The rich morphology may be attributed to the competition in growth rate among different crystallographic planes. Structural characterization with highresolution transmission electron microscopy showed that the nanowires and nanosquares grew in a preferential direction of [200]. The superconducting transition temperatures for Sn nanowires and Sn nanosquares were about 3.7 K, which was very close to that of bulk beta-Sn. Magnetization measurements showed that the critical magnetic fields for both Sn nanowires and Sn nanosquares increased significantly as compared to that of bulk Sn.
引用
收藏
页码:4398 / 4403
页数:6
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