Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics

被引：24

作者：

Hieslmair, H ^{[1
]}

Istratov, AA ^{[1
]}

Heiser, T ^{[1
]}

Weber, ER ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.368127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The use of Ham's law in various forms to analyze precipitate site density is discussed. Ham's law is also applied to situations where the site density is of the same order as the solute concentration. While the results are general, this analysis uses iron precipitation and iron-boron pairing in silicon as example systems. The results of Ham's paper are reviewed and several implementations of Ham's Law are compared and fitted to experimental data. Iron-boron pairing is described using Ham's law and a capture radius of the boron of 6 nm is obtained. (C) 1998 American Institute of Physics. [S0021-8979(98)06314-2]

引用

页码：713 / 717

页数：5

共 15 条

[1] PRECIPITATION OF IRON IN POLYCRYSTALLINE SILICON [J].

BAILEY, J ;

WEBER, ER .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 137 (02) :515-523

[2] MECHANISM OF INTERNAL GETTERING OF INTERSTITIAL IMPURITIES IN CZOCHRALSKI-GROWN SILICON [J].

GILLES, D ;

WEBER, ER ;

HAHN, S .

PHYSICAL REVIEW LETTERS, 1990, 64 (02) :196-199

[3]

GILLES D, 1990, SEMICONDUCTOR SILICO, P697

[4] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

[5] Iron precipitation in float zone grown silicon [J].

Henley, WB ;

Ramappa, DA .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :589-594

[6] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

PHYSICA B & C, 1983, 116 (1-3) :297-300

[7] IRON DETECTION IN THE PART PER QUADRILLION RANGE IN SILICON USING SURFACE PHOTOVOLTAGE AND PHOTODISSOCIATION OF IRON-BORON PAIRS [J].

LAGOWSKI, J ;

EDELMAN, P ;

KONTKIEWICZ, AM ;

MILIC, O ;

HENLEY, W ;

DEXTER, M ;

JASTRZEBSKI, L ;

HOFF, AM .

APPLIED PHYSICS LETTERS, 1993, 63 (22) :3043-3045

[8] DONATION CHARACTERISTICS OF IRON IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :215-224

[9] AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

LIVINGSTON, FM ;

MESSOLORAS, S ;

NEWMAN, RC ;

PIKE, BC ;

STEWART, RJ ;

BINNS, MJ ;

BROWN, WP ;

WILKES, JG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34) :6253-6276

[10]

MESLI A, 1996, DIFFUS DE A, V131, P89

← 1 2 →