Diameter-dependent growth direction of epitaxial silicon nanowires

被引：441

作者：

Schmidt, V ^{[1
]}

Senz, S ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle Saale, Germany

来源：

NANO LETTERS | 2005年 / 5卷 / 05期

关键词：

D O I：

10.1021/nl050462g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We found that silicon nanowires grown epitaxially on Si (100) via the vapor-liquid-solid growth mechanism change their growth direction from &LANGBRAC; 111&RANGBRAC; to &LANGBRAC; 110&RANGBRAC; at a crossover diameter of approximately 20 nm. A model is proposed for the explanation of this phenomenon. We suggest that the interplay of the liquid-solid interfacial energy with the silicon surface energy expressed in terms of an edge tension is responsible for the change of the growth direction. The value of the edge tension is estimated by the product of the interfacial thickness with the surface energy of silicon. For large diameters, the direction with the lowest interfacial energy is dominant, whereas for small diameters the surface energy of the silicon nanowire determines the preferential growth direction.

引用

页码：931 / 935

页数：5

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