Perspectives of graphene nanoelectronics: probing technological options with modeling

被引：41

作者：

Iannaccone, G. ^{[1
]}

Fiori, G. ^{[1
]}

Macucci, M. ^{[1
]}

Michetti, P. ^{[1
]}

Cheli, M. ^{[1
]}

Betti, A. ^{[1
]}

Marconcini, P. ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz Elettron, Pisa, Italy

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

FIELD-EFFECT TRANSISTORS; BILAYER GRAPHENE; BANDGAP;

D O I：

10.1109/IEDM.2009.5424376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we show how numerical and analytical modeling of graphene-based devices is used to consider possible approaches to engineer a gap in graphene and to evaluate the perspectives of different technological options towards graphene nanoelectronics.

引用

页码：224 / 227

页数：4

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