Chemically Induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

被引：90

作者：

Biel, Blanca ^{[1
,2
]}

Triozon, Francois ^{[2
]}

Blase, X. ^{[3
,4
]}

Roche, Stephan ^{[1
,5
]}

机构：

[1] CEA, INAC SP2M L Sim, F-38054 Grenoble 9, France

[2] CEA, LETI, MINATEC, F-38054 Grenoble, France

[3] CNRS, Inst Neel, F-38042 Grenoble 09, France

[4] Univ Grenoble 1, F-38042 Grenoble 09, France

[5] Tech Univ Dresden, Inst Mat Sci, D-01062 Dresden, Germany

来源：

NANO LETTERS | 2009年 / 9卷 / 07期

关键词：

CARBON NANOTUBES; TRANSISTORS; ZIGZAG; STATE;

D O I：

10.1021/nl901226s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasi-bound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically doped graphene nanoribbons with sizes within the reach of conventional lithography.

引用

页码：2725 / 2729

页数：5

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