Chemically Induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

被引:90
作者
Biel, Blanca [1 ,2 ]
Triozon, Francois [2 ]
Blase, X. [3 ,4 ]
Roche, Stephan [1 ,5 ]
机构
[1] CEA, INAC SP2M L Sim, F-38054 Grenoble 9, France
[2] CEA, LETI, MINATEC, F-38054 Grenoble, France
[3] CNRS, Inst Neel, F-38042 Grenoble 09, France
[4] Univ Grenoble 1, F-38042 Grenoble 09, France
[5] Tech Univ Dresden, Inst Mat Sci, D-01062 Dresden, Germany
关键词
CARBON NANOTUBES; TRANSISTORS; ZIGZAG; STATE;
D O I
10.1021/nl901226s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasi-bound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically doped graphene nanoribbons with sizes within the reach of conventional lithography.
引用
收藏
页码:2725 / 2729
页数:5
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