Novel laser ablation resists for excimer laser ablation lithography. Influence of photochemical properties on ablation

被引:41
作者
Wei, J
Hoogen, N
Lippert, T [1 ]
Nuyken, O
Wokaun, A
机构
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] Tech Univ Munich, Lehrstuhl Makromol Stoffe, D-85747 Garching, Germany
关键词
D O I
10.1021/jp003325a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The ablation characteristics of various polymers were studied at low and high fluences. The polymers can be divided into three groups, i.e., polymers containing triazene and ester groups, the same polymers without the triazene group, and polyimide as reference polymer. At high fluences, similar ablation parameters, i.e., etch rates and effective absorption coefficients, were obtained for all polymers. The main difference is the absence of carl,on deposits for the designed polymers. At low fluences, very pronounced differences are detected. The polymers containing the photochemically most active group (triazene) exhibit the lowest threshold of ablation and the highest etch rates, followed by the designed polyesters and then polyimide. Neither the linear nor the effective absorption coefficients reveal a clear influence on the ablation characteristics. The thermal properties of the designed polymers also have only minor influence on the ablation activity. The amount of detected gaseous products follows the same trend as the ablation activity, suggesting a combined mechanism of photochemical decomposition and volume increase for the designed polymers. The different behavior of polyimide might be explained by a pronounced thermal part in the ablation mechanism.
引用
收藏
页码:1267 / 1275
页数:9
相关论文
共 38 条
[31]   Positive-negative inversion of silicon based resist materials: Poly(di-n-hexylsilane) for ion beam irradiation [J].
Seki, S ;
Kanzaki, K ;
Yoshida, Y ;
Tagawa, S ;
Shibata, H ;
Asai, K ;
Ishigure, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08) :5361-5364
[32]   ABLATION OF POLYIMIDE (KAPTON(TM)) FILMS BY PULSED (NS) ULTRAVIOLET AND INFRARED (9.17-MU-M) LASERS - A COMPARATIVE-STUDY [J].
SRINIVASAN, R .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (05) :417-423
[33]   ABLATIVE PHOTODECOMPOSITION OF POLYMER-FILMS BY PULSED FAR-ULTRAVIOLET (193 NM) LASER-RADIATION - DEPENDENCE OF ETCH DEPTH ON EXPERIMENTAL CONDITIONS [J].
SRINIVASAN, R ;
BRAREN, B .
JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1984, 22 (10) :2601-2609
[34]   SELF-DEVELOPING PHOTOETCHING OF POLY(ETHYLENE-TEREPHTHALATE) FILMS BY FAR ULTRAVIOLET EXCIMER LASER-RADIATION [J].
SRINIVASAN, R ;
MAYNEBANTON, V .
APPLIED PHYSICS LETTERS, 1982, 41 (06) :576-578
[35]   Excimer ablation lithography (EAL) for TFT-LCD [J].
Suzuki, K ;
Matsuda, M ;
Ogino, T ;
Hayashi, N ;
Terabayashi, T ;
Amemiya, K .
EXCIMER LASERS, OPTICS, AND APPLICATIONS, 1997, 2992 :98-107
[36]   THE INTERACTION OF EXCIMER LASER ULTRAVIOLET-RADIATION WITH KAPTON-H IN VACUUM AND UNDER MECHANICAL-STRESS [J].
TONYALI, K ;
JENSEN, LC ;
DICKINSON, JT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :941-945
[37]   QUANTITATIVE MEASUREMENT OF THE ABLATION RATE OF POLY(METHYL METHACRYLATE) WITH 193-NM EXCIMER LASER-RADIATION [J].
VANSAARLOOS, PP ;
CONSTABLE, IJ .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) :377-379
[38]   Characterisation of combined positive-negative photoresists by excimer laser ablation [J].
Wei, J ;
Hoogen, N ;
Lippert, T ;
Hahn, C ;
Nuyken, O ;
Wokaun, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1) :S849-S853