High emissive power MWIR LED array

被引：13

作者：

Das, NC

Olver, K

Towner, F

机构：

[1] Army Res Lab, Microphoton Branch, Adelphi, MD 20783 USA

[2] USA, Res Lab, IR Mat Branch, Adelphi, MD 20783 USA

[3] Maxion Technol, Hyattsville, MD 20782 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 08期

关键词：

light emitting diodes; IR scene generation; interband cascade structure; surface roughening; black body emissivity;

D O I：

10.1016/j.sse.2005.06.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mid-IR light sources with high optical power are required for many applications. We report here the mid-IR (3.8 mu m) light emission from an interband cascade (IQ LED structure with an equivalent black body emissive temperature greater than 1050 K. The IC epitaxial structure for LED comprises of 9 or IS periods of active regions separated by multilayer injection regions. We have made an 8 x 7 2D LED array with different mesa sizes. The light output as well as the efficiency increases with the increase of mesa size and the number of active/injection layers in IC LED structure. Published by Elsevier Ltd.

引用

页码：1422 / 1427

页数：6

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