Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices

被引:17
作者
Dupont, E [1 ]
McCaffrey, JP
Liu, HC
Buchanan, M
Yang, RQ
Lin, CH
Zhang, D
Pei, SS
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA
关键词
D O I
10.1063/1.121037
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality. (C) 1998 American Institute of Physics.
引用
收藏
页码:1495 / 1497
页数:3
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