Hot carrier effects in low-temperature polysilicon thin-film transistors

被引：50

作者：

Uraoka, Y

Hatayama, T

Fuyuki, T

Kawamura, T

Tsuchihashi, Y

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] Matsushita Elect Ind Co Ltd, LCD Div, Nomi, Ishikawa 9231296, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 4B期

关键词：

low-temperature poly-Si; hot carrier; LDD; device simulation; photon emission;

D O I：

10.1143/JJAP.40.2833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the reliability of a low-temperature polysilicon (poly-Si) thin-film transistor (TFT). The drain avalanche hot electron effect was characterized by changing the stress gate and drain voltage dependence. Generation of hot carriers was confirmed using an emission microscope. It was found that the degradation was improved by the lightly doped drain (LDD) structure. A degradation model was proposed and analyzed along with a two-dimensional device simulator. Reasonable agreement with the experimental results was successfully obtained. It was found that the density of state (DOS) of poly-Si was increased by the hot carrier effect locally around the drain region.

引用

页码：2833 / 2836

页数：4

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