Tunnel-junction-connected distributed-feedback vertical-cavity surface-emitting laser

被引:9
作者
Korshak, AN [1 ]
Gribnikov, ZS [1 ]
Mitin, VV [1 ]
机构
[1] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA
关键词
D O I
10.1063/1.122217
中图分类号
O59 [应用物理学];
学科分类号
摘要
An injection distributed-feedback vertical-cavity surface-emitting laser (VCSEL) with tunnel junctions served as quasi-Ohmic intercontacts (tunnel-junction-connected distributed-feedback VCSEL) is proposed. A periodic structure of vertically stacked double-heterostructure laser diodes connected by low-resistance tunnel junctions forms a vertical distributed-feedback (DFB) laser medium. To minimize the threshold, the DFB structure is placed in a Fabry-Perot cavity designed to match gain layers with the maximums of the optical mode, and the tunnel junctions-with its minimums. The passive regions with tunnel junctions provide effective vertical injection into each active region of this multiple-active-region laser. This DFB VCSEL is expected to have an improved performance, specifically, reduced threshold current and heightened output power. (C) 1998 American Institute of Physics.
引用
收藏
页码:1475 / 1477
页数:3
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共 9 条
  • [1] Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser
    Garcia, JC
    Rosencher, E
    Collot, P
    Laurent, N
    Guyaux, JL
    Vinter, B
    Nagle, J
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3752 - 3754
  • [2] LASING CHARACTERISTICS OF LOW-THRESHOLD OXIDE CONFINEMENT INGAAS-GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
    HAYASHI, Y
    MUKAIHARA, T
    HATORI, N
    OHNOKI, N
    MATSUTANI, A
    KOYAMA, F
    IGA, K
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) : 1234 - 1236
  • [3] 57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs
    Jager, R
    Grabherr, M
    Jung, C
    Michalzik, R
    Reiner, G
    Weigl, B
    Ebeling, KJ
    [J]. ELECTRONICS LETTERS, 1997, 33 (04) : 330 - 331
  • [4] N-P-(P+-N+)-N ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL LASER WITH P+-N+ GAAS-INGAAS TUNNEL CONTACT ON N-GAAS
    SUGG, AR
    CHEN, EI
    RICHARD, TA
    MARANOWSKI, SA
    HOLONYAK, N
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (20) : 2510 - 2512
  • [5] Over 30% efficient InGaP/GaAs tandem solar cells
    Takamoto, T
    Ikeda, E
    Kurita, H
    Ohmori, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 381 - 383
  • [6] TAYAHI MB, 1997, ELECTRON LETT, V31, P1794
  • [7] High-performance oxide-confined GaAs VCSEL's
    Weigl, B
    Grabherr, M
    Jung, C
    Jager, R
    Reiner, G
    Michalzik, R
    Sowada, D
    Ebeling, KJ
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 409 - 415
  • [8] Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources
    Wierer, JJ
    Evans, PW
    Holonyak, N
    Kellogg, DA
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (24) : 3468 - 3470
  • [9] ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS OBTAINED WITH SELECTIVE OXIDATION
    YANG, GM
    MACDOUGAL, MH
    DAPKUS, PD
    [J]. ELECTRONICS LETTERS, 1995, 31 (11) : 886 - 888