A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors

被引：17

作者：

Bovolon, N ^{[1
]}

Schultheis, R

Muller, JE

Zwicknagl, P

Zanoni, E

机构：

[1] Univ Padua, Dept Elect Engn, I-35131 Padua, Italy

[2] Siemens Corp Res & Dev, D-81730 Munich, Germany

[3] Siemens Semicond Grp, D-81617 Munich, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 12期

关键词：

GaAs compounds; heterojunction bipolar transistor; semiconductor device reliability;

D O I：

10.1109/55.735749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In high current and power density applications of AlGaAs/GaAs heterojunction bipolar transistors (HBT's), reliability is a critical issue, Therefore, in this letter we show results of a fundamental investigation on the temperature and current dependence of the fast initial rise of the dc-current gain (burn-in), which takes place during stress at current densities beyond those of today's applications. We find that the burn-in occurs at lower device junction temperatures (135 degrees C) than previously reported in literature, and that it depends linearly on the current density. An activation energy of 0.4 eV is extracted for the burn-in effect.

引用

页码：469 / 471

页数：3

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