A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors

被引：60

作者：

Bovolon, N ^{[1
]}

Baureis, P

Muller, JE

Zwicknagl, P

Schultheis, R

Zanoni, E

机构：

[1] Univ Padua, Dept Elect Engn, I-35131 Padua, Italy

[2] Siemens AG, Dept Corp Res & Dev, D-81730 Munich, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

D O I：

10.1109/16.704388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The keg advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.

引用

页码：1846 / 1848

页数：3

共 8 条

[1] THERMAL-RESISTANCE MEASUREMENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].