Thermal impedance extraction for bipolar transistors

被引:47
作者
Zweidinger, DT
Fox, RM
Brodsky, JS
Jung, T
Lee, SG
机构
[1] HARRIS SEMICOND INC,MELBOURNE,FL 32902
[2] HANDONG UNIV,SCH COMP SCI & ELECTR ENGN,KYUNGBOOK 791940,SOUTH KOREA
关键词
D O I
10.1109/16.481737
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a method for extracting the thermal impedance of bipolar transistors, The measurement is a two-step process: first the fractional temperature coefficients are calibrated at de and then a transient step response is measured to extract the thermal spreading impedance. Measurement configurations and an example measurement cycle are shown, The measurement results can be fitted to multiple-pole models for use in compact circuit modeling in SPICE.
引用
收藏
页码:342 / 346
页数:5
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