Variable threshold voltage CMOS (VTCMOS) in series connected circuits

被引：11

作者：

Inukai, T ^{[1
]}

Hiramoto, T ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

ISLPED'01: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON LOWPOWER ELECTRONICS AND DESIGN | 2001年

关键词：

variable threshold voltage CMOS; series connected circuits; degradation factor; body effect factor; substrate bias; velocity saturation;

D O I：

10.1109/LPE.2001.945401

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Characteristics of variable threshold voltage CMOS (VTCMOS) in the series connected circuits are investigated by means of device simulation. It is newly found that the performance degradation due to the body effect in series connected circuit is suppressed by utilizing VTCMOS. Lowering the threshold voltage (V-th) enhances the drive current and alleviates the degradation due to the series connected configuration. Therefore, larger body effect factor (gamma) results in lower V-th and higher on-current even in the series connected circuits. These characteristics are attributed to the velocity saturation phenomenon which reduces the drain saturation voltage (V-dsat).

引用

页码：201 / 206

页数：6

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