Sizes of self-assembled quantum dots - effects of deposition conditions and annealing

被引：9

作者：

Johansson, J ^{[1
]}

Seifert, W ^{[1
]}

Junno, T ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Univ Lund, S-22100 Lund, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

基金：

瑞典研究理事会;

关键词：

metal organic vapor phase epitaxy; annealing; Stranski-Krastanow growth; self-assembling; quantum dots;

D O I：

10.1016/S0022-0248(98)00662-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Quantum dots in the materials system InP/GaAs were grown by low pressure MOVPE in the Stranski-Krastanow growth mode. Two basically different approaches were used to control the dot sizes: (i) Variations in temperature and deposition rate and (ii) post growth annealing under PH3/H-2 at growth temperature. AFM investigations show a decrease in dot height from 17 nm to 12 and 5 nm (bimodal height distribution) by changing the deposition rate from 0.5 to 3.5 ML/s. For the annealed samples we observe a continuous decrease in height from 19 to 7 nm after 30 min annealing. (C) 1998 Elsevier Science B.V. All rights reserved.

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收藏

页码：546 / 551

页数：6

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