In situ growth of nano-structures by metal-organic vapour phase epitaxy

被引：76

作者：

Seifert, W

Carlsson, N

Johansson, J

Pistol, ME

Samuelson, L

机构：

[1] Department of Solid State Physics, Lund University, Box 118

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00518-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using spontaneous self-organization effects is an efficient way to produce nano-structures, as for instance quantum wires and quantum dots. This article is focused on the strain-induced self-organization, or ''self-assembling'' effect, producing quantum dots. Particularly the following aspects will be addressed: (i) the phenomenology of the 2D-3D morphology transition, (ii) the effects of materials choices and growth conditions on density, size and homogeneity of dots, and (iii) manipulations to get laterally aligned and vertically stacked dot structures.

引用

收藏

页码：39 / 46

页数：8

相关论文

共 45 条

[1] SELECTIVE GROWTH OF INGAAS ON NANOSCALE INP ISLANDS [J].

AHOPELTO, J ;

LIPSANEN, H ;

SOPANEN, M ;

KOLJONEN, T ;

NIEMI, HEM .

APPLIED PHYSICS LETTERS, 1994, 65 (13) :1662-1664

[2]

AHOPELTO J, 1995, P 7 IND PHOSPH REL M, P311

[3] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].

CARLSSON, N ;

SEIFERT, W ;

PETERSSON, A ;

CASTRILLO, P ;

PISTOL, ME ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3093-3095

[4] IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER [J].

CARLSSON, N ;

GEORGSSON, K ;

MONTELIUS, L ;

SAMUELSON, L ;

SEIFERT, W ;

WALLENBERG, R .

JOURNAL OF CRYSTAL GROWTH, 1995, 156 (1-2) :23-29

[5] MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100) [J].

CHEN, P ;

XIE, Q ;

MADHUKAR, A ;

CHEN, L ;

KONKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2568-2573

[6] FORMATION OF LATERAL QUANTUM-WELLS IN VERTICAL SHORT-PERIOD SUPERLATTICES BY STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS [J].

CHENG, KY ;

HSIEH, KC ;

BAILLARGEON, JN .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2892-2894

[7] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[8] FORMATION OF COHERENTLY STRAINED SELF-ASSEMBLED INP QUANTUM ISLANDS ON INGAP/GAAS(001) [J].

DENBAARS, SP ;

REAVES, CM ;

BRESSLERHILL, V ;

VARMA, S ;

WEINBERG, WH ;

PETROFF, PM .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :721-727

[9] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[10] MOCVD METHODS FOR FABRICATING GAAS QUANTUM WIRES AND QUANTUM DOTS [J].

FUKUI, T ;

SAITO, H ;

KASU, M ;

ANDO, S .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :493-496

← 1 2 3 4 5 →