Characteristics of (Ba, Sr)TiO3 capacitors with textured Ru bottom electrode

被引：25

作者：

Aoyama, T ^{[1
]}

Yamazaki, S ^{[1
]}

Imai, K ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 11期

关键词：

Ru; c-axis orientation; (Ba; Sr)TiO3; capacitor; electrode; sputtering; X-ray diffraction; dielectric constant; leakage current;

D O I：

10.1143/JJAP.39.6348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ru films were fabricated by de magnetron sputtering in an Ar/O-2 mixture ambient in order to examine the Ru films as electrodes of Ba0.5Sr0.5TiO3 (BST) thin-film capacitors. The 100-nm-thick Ru film deposited on Si at 450 degreesC at an O-2/(Ar + O-2) flow ratio of 40% at 0.5 kW was textured along c-axis. The full-width at half maximum (FWHM) of 3.14 degrees was obtained for the Ru (002) diffraction peak in an X-ray diffraction (XRD) pattern. BST films deposited on the Ru bottom electrode were also textured along (110). The relative dielectric constant of BST films increased with a decrease in the FWHM of BST (110). The relationship between electrical properties of Ru/BST/Ru capacitors and the orientation of the Ru bottom electrode and BST films was also investigated.

引用

页码：6348 / 6357

页数：10

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