Preparation and pyroelectric characteristics of Pb(Zr,Ti)O-3 thin films grown by metalorganic chemical vapor deposition

Highly (001), (110) and (111)-oriented lead zirconate titanate (PZT) thin films with a thickness of 2 mu m were grown on Pt(100)/MgO(100), RuO2(110)/MgO(100) and Pt(111)/SiO2/Si(100) substrates, respectively, by metalorganic chemical vapor deposition. The pyroelectric properties of these films were investigated in relation to application to infrared sensors. Pyroelectric currents were detected on three differently oriented films without poling treatment. Pyroelectric coefficients of (001), (110) and (111)-oriented films were 3.0, 1.0 and 0.5 x 10(-8) C/cm(2) . K, respectively due to strong dependence on their crystalline orientations. With poling treatment, these values were increased and attained values 3 times as large as those of as-grown films for (111)-oriented films.