Deposition of indium tin oxide by atmospheric pressure chemical vapour deposition

被引：28

作者：

Gaskell, Jeffrey M. ^{[1
]}

Sheel, David W. ^{[1
]}

机构：

[1] Univ Salford, Manchester M5 4WT, Lancs, England

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 12期

关键词：

Indium tin oxide; APCVD; Chemical vapour deposition; Transparent conductive oxide; Photovoltaics; RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; TRANSPARENT;

D O I：

10.1016/j.tsf.2011.04.191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the deposition of indium tin oxide (ITO) by atmospheric pressure chemical vapour deposition (APCVD). This process is potentially scalable for high throughput, large area production. We utilised a previously unreported precursor combination: dimethylindium acetylacetonate, [Me2In(acac)] and monobutyltintrichloride, MBTC. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Monobutyltintrichloride (MBTC) is also easily handled and can be readily vaporised. It is compatible with the process conditions required for using [Me2In(acac)]. Cubic ITO was deposited at a substrate temperature of 550 degrees C with growth rates exceeding 15 nm/s and growth efficiencies of between 20 and 30%. Resistivity was 3.5 x 10(-4) Omega cm and transmission for a 200 nm film was >85% with less than 2% haze. (C) 2011 Elsevier B.V. All rights reserved.

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页码：4110 / 4113

页数：4

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