Epitaxial Graphene on SiC(0001): More than Just Honeycombs

被引:122
作者
Qi, Y. [1 ]
Rhim, S. H.
Sun, G. F.
Weinert, M.
Li, L.
机构
[1] Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA
关键词
ELECTRONIC-STRUCTURE; INTERFACE FORMATION; SURFACE; 6H-SIC(0001); TRANSISTORS;
D O I
10.1103/PhysRevLett.105.085502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with hexagon-pentagon-heptagon (H-5,H-6,H-7) defects that break the honeycomb symmetry, thereby inducing a gap and states below E-F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice, its interaction with the warped layer modifies the dispersion about the Dirac point. These results explain recent angle-resolved photoemission and carbon core-level shift data and solve the long-standing problem of the interfacial structure of epitaxial graphene on SiC(0001).
引用
收藏
页数:4
相关论文
共 34 条
  • [1] Temperature-dependent transport in suspended graphene
    Bolotin, K. I.
    Sikes, K. J.
    Hone, J.
    Stormer, H. L.
    Kim, P.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (09)
  • [2] Quasiparticle dynamics in graphene
    Bostwick, Aaron
    Ohta, Taisuke
    Seyller, Thomas
    Horn, Karsten
    Rotenberg, Eli
    [J]. NATURE PHYSICS, 2007, 3 (01) : 36 - 40
  • [3] The electronic properties of graphene
    Castro Neto, A. H.
    Guinea, F.
    Peres, N. M. R.
    Novoselov, K. S.
    Geim, A. K.
    [J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
  • [4] Electronic structure of carbon nanocones
    Charlier, JC
    Rignanese, GM
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (26) : 5970 - 5973
  • [5] Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
    Emtsev, K. V.
    Speck, F.
    Seyller, Th.
    Ley, L.
    Riley, J. D.
    [J]. PHYSICAL REVIEW B, 2008, 77 (15):
  • [6] Initial stages of the Graphite-SiC(0001) interface formation studied by photoelectron Spectroscopy
    Emtsev, K. V.
    Seyller, Th.
    Speck, F.
    Ley, L.
    Stojanov, P.
    Riley, J. D.
    Leckey, R. G. C.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 525 - +
  • [7] Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
  • [8] Heteroepitaxial graphite on 6H-SiC(0001):: Interface formation through conduction-band electronic structure
    Forbeaux, I
    Themlin, JM
    Debever, JM
    [J]. PHYSICAL REVIEW B, 1998, 58 (24): : 16396 - 16406
  • [9] The growth and morphology of epitaxial multilayer graphene
    Hass, J.
    de Heer, W. A.
    Conrad, E. H.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)
  • [10] Structure of polygonal defects in graphitic carbon sheets
    Ihara, S
    Itoh, S
    Akagi, K
    Tamura, R
    Tsukada, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (20): : 14713 - 14719