Performance comparisons between Cu/Low-κ, carbon-nanotube, and optics for future on-chip interconnects

被引:21
作者
Cho, Hoyeol [1 ]
Koo, Kyung-Hoae [2 ]
Kapur, Pawan [2 ]
Saraswat, Krishna C. [2 ]
机构
[1] Sun Microsyst Inc, Santa Clara, CA 95054 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
bisectional bandwidth; carbon nanotube; copper resistivity; energy per bit; latency; optical interconnect; power;
D O I
10.1109/LED.2007.911617
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we compare the performance of carbon nanotubes and optical interconnects with the scaled Cu/low-kappa interconnects for future high-performance integrated circuits. We present these comparisons in terms of both commonly used metrics, such as latency, energy per bit (power dissipation), as well as by demonstrating an explicit relationship between system-relevant metrics such as bandwidth density, power density and latency. We find that for long wires (similar to 10 mm) both carbon nanotubes and optical interconnects outperform future Cu wires with optical interconnects having lower energy per bit and latency. For short wires (similar to 1 mm), carbon-nanotube wires outperform both Cu and optical interconnects.
引用
收藏
页码:122 / 124
页数:3
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