Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

被引：106

作者：

Hirama, K. ^{[1
]}

Takayanagi, H. ^{[1
]}

Yamauchi, S. ^{[1
]}

Yang, J. H. ^{[1
]}

Kawarada, H. ^{[1
]}

Umezawa, H. ^{[2
]}

机构：

[1] Waseda Univ, Sch Sci & Engn, Tokyo 1698555, Japan

[2] Diamond Res Ctr, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058586, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 11期

关键词：

D O I：

10.1063/1.2889947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated on IIa-type large-grain diamond substrates with a (110) preferential surface. The drain current and cutoff frequency are -790 mA/mm and 45 GHz, respectively, which are higher than those of single-crystal diamond FETs fabricated on (001) homoepitaxial diamond films. The hole carrier density of the hole accumulation layer depends on the orientation of the hydrogen-terminated diamond surface, for which (110) preferentially oriented films show 50%-70% lower sheet resistance than a (001) substrate. We propose that the hole density of the surface accumulation layer is proportional to the C-H bond density on the surface. (c) 2008 American Institute of Physics.

引用

页数：3

共 17 条

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