2W/mm output power density at 1 GHz for diamond FETs

被引：125

作者：

Kasu, M ^{[1
]}

Ueda, K ^{[1
]}

Ye, H ^{[1
]}

Yamauchi, Y ^{[1
]}

Sasaki, S ^{[1
]}

Makitnoto, T ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 22期

关键词：

D O I：

10.1049/el:20053194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 mu m and gate width of 100 pro, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

引用

页码：1249 / 1250

页数：2

共 6 条

[1] Diamond field effect transistors - concepts and challenges [J].

Aleksov, A ;

Kubovic, M ;

Kaeb, N ;

Spitzberg, U ;

Bergmaier, A ;

Dollinger, G ;

Bauer, T ;

Schreck, M ;

Stritzker, B ;

Kohn, E .

[2] The toughest transistor yet [J].

Eastman, LF ;

Mishra, UK .

IEEE SPECTRUM, 2002, 39 (05) :28-+

[3] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[4] Influence of epitaxy on the surface conduction of diamond film [J].

Kasu, M ;

Kubovic, M ;

Aleksov, A ;

Teofilov, N ;

Taniyasu, Y ;

Sauer, R ;

Kohn, E ;

Makimoto, T ;

Kobayashi, N .

[5]

Kohn E, 1998, SPR S MAT PROC, P331

[6] Microwave performance evaluation of diamond surface channel FETs [J].

Kubovic, M ;

Kasu, M ;

Kallfass, I ;

Neuburger, M ;

Aleksov, A ;

Koley, G ;

Spencer, MG ;

Kohn, E .

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