Microwave performance evaluation of diamond surface channel FETs

被引:70
作者
Kubovic, M
Kasu, M
Kallfass, I
Neuburger, M
Aleksov, A
Koley, G
Spencer, MG
Kohn, E
机构
[1] Univ Ulm, Dept Electron Devices & Circuits, D-89081 Ulm, Germany
[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
关键词
diamond; electrical properties; FET; microwave performance;
D O I
10.1016/j.diamond.2003.11.089
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond is expected to become an important semiconductor for high power and high frequency applications. Recent progress in fabrication technology has enabled DC, small signal RF, large signal RF and switching experiments on devices with short gatelength leading to the first comprehensive assessment of the performance capability of these devices. Using high-quality diamond buffer layers the highest cut-off frequencies for L-G = 0.2 mum namely f(T) = 24.6 GHz, f(max(MAG)) = 63 GHz and f(max)((U)) = 80 GHz could be extracted from small signal measurements near the pinch-off region. First noise measurements have resulted in a minimum noise figure F-min of approximately 1 dB at 3 GHz. Power measurement at I GHz indicate a saturated output power density of 0.35 W/mm, which is, however, limited by the on-wafer tuning range. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:802 / 807
页数:6
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