Exceptionally high voltage Schottky diamond diodes and low boron doping

被引：166

作者：

Butler, JE

Geis, MW

Krohn, KE

Lawless, J

Deneault, S

Lyszczarz, TM

Flechtner, D

Wright, R

机构：

[1] USN, Res Lab, Div Chem, Washington, DC 20375 USA

[2] MIT, Lincoln Lab, Lexington, MA 02420 USA

[3] Diamond Microelect Corp, Santa Monica, CA 90402 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 03期

关键词：

D O I：

10.1088/0268-1242/18/3/309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Exceptionally pure epitaxial diamond layers have been grown by microwave plasma chemical vapour deposition, which have low boron doping, from 5 x 10(14) to 1 x 10(16) cm(-3), and the compensating n-type impurities are the lowest reported for any semiconducting diamond, <3 x 10(13) cm(-3). The hydrogen impurities that bind with the boron making them electrically inactive can be significantly reduced by baking the diamond to >700 degreesC for similar to1 s in air. Schottky diodes made on these epitaxial diamond films have breakdown voltages >6 kV, twelve times the highest breakdown voltage reported for any diamond diode and higher than any other semiconductor Schottky diode.

引用

页码：S67 / S71

页数：5

共 22 条

[1] Hydrogen and doping issues in wide band gap semiconductors [J].

Chevallier, J .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 (71) :62-68

[2] SiC and GaN bipolar power devices [J].

Chow, TP ;

Khemka, V ;

Fedison, J ;

Ramungul, N ;

Matocha, K ;

Tang, Y ;

Gutmann, RJ .

SOLID-STATE ELECTRONICS, 2000, 44 (02) :277-301

[3] High voltage GaN Schottky rectifiers [J].

Dang, GT ;

Zhang, AP ;

Ren, F ;

Cao, XA ;

Pearton, SJ ;

Cho, H ;

Han, J ;

Chyi, JI ;

Lee, CM ;

Chuo, CC ;

Chu, SNG ;

Wilson, RG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (04) :692-696

[4]

DMITRIEV AP, 1983, SOV PHYS SEMICOND+, V17, P686

[5] HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES [J].

GEIS, MW ;

EFREMOW, NN ;

VONWINDHEIM, JA .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :952-954

[6] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].

GEIS, MW ;

RATHMAN, DD ;

EHRLICH, DJ ;

MURPHY, RA ;

LINDLEY, WT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :341-343

[7] Hole traps in natural type IIb diamond [J].

Geis, MW ;

Twichell, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) :1514-1522

[8] Diamond surface-channel FET structure with 200 V breakdown voltage [J].

Gluche, P ;

Aleksov, A ;

Vescan, A ;

Ebert, W ;

Kohn, E .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) :547-549

[9]

HARRIS GL, 1995, PROPERTIES SEMICONDU

[10] DEVICE PROPERTIES OF HOMOEPITAXIALLY GROWN DIAMOND [J].

LANDSTRASS, MI ;

PLANO, MA ;

MORENO, MA ;

MCWILLIAMS, S ;

PAN, LS ;

KANIA, DR ;

HAN, S .

← 1 2 3 →