Hole traps in natural type IIb diamond

被引：4

作者：

Geis, MW

Twichell, JC

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 09期

关键词：

D O I：

10.1109/16.622609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hole traps in natural type IIb diamond have been characterized with Schottky diodes using thermal and optical techniques. The Schottky diode capacitance variation with time was used to determine the detrapping rate of holes. For reverse-biased Schottky diodes the rate was found to be independent of both electric field from 0 to 3.6 x 10(5) V cm(-1), and temperature from -25 to 102 degrees C. Optical radiation below 1.4 eV (>890 nm) has no measurable effect on the detrapping rate, while the sate increases with decreasing wavelength below 870 nm, We speculate that the traps are caused by impurities, possibly nitrogen aggregates, distributed over an energy range 1.4-4 eV above the valence band.

引用

收藏

页码：1514 / 1522

页数：9

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