Erbium-silicon-oxide nano-crystallite waveguide formation based on nano-porous silicon

被引:7
作者
Kimura, T [1 ]
Ueda, K [1 ]
Saito, R [1 ]
Masaki, K [1 ]
Isshiki, H [1 ]
机构
[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan
关键词
D O I
10.1016/j.optmat.2004.08.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new method is shown of the formation of a waveguide structure composed of erbium-silicon-oxide (Er-Si-O) nanocrystallites based on nano-porous silicon. A porous silicon (PS) double layered (core and clad) waveguide structure with a cross-section of semicircular shape was first formed by spatially selective anodic etching of an n-Si wafer in the dark. The core and clad PS layers consist is of different nanometer pore sizes. Next, Er ions were incorporated into pores by immersing the PS layers in an erbium-chloride/ethanol solution for 24h. After drying, a two-step annealing was carried out to convert the Er-incorporated PS layers into Er-Si-O crystallites. The resulting samples showed a finely structured photoluminescence spectrum due to the 4f-4f inner shell transition of Er3+ ions at room temperature which was characteristic of Er-Si-O crystallites. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:880 / 883
页数:4
相关论文
共 15 条
[1]   High efficiency and fast modulation of Er-doped light emitting Si diodes [J].
Coffa, S ;
Franzo, G ;
Priolo, F .
APPLIED PHYSICS LETTERS, 1996, 69 (14) :2077-2079
[2]   ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].
FRANZO, G ;
PRIOLO, F ;
COFFA, S ;
POLMAN, A ;
CARNERA, A .
APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237
[3]   Photoluminescence from SiO2 films containing Si nanocrystals and Er:: Effects of nanocrystalline size on the photoluminescence efficiency of Er3+ [J].
Fujii, M ;
Yoshida, M ;
Hayashi, S ;
Yamamoto, K .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4525-4531
[4]   1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide [J].
Han, HS ;
Seo, SY ;
Shin, JH ;
Kim, DS .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :2160-2162
[5]   Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide [J].
Han, HS ;
Seo, SY ;
Shin, JH .
APPLIED PHYSICS LETTERS, 2001, 79 (27) :4568-4570
[6]   Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2 [J].
Kik, PG ;
Polman, A .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :534-536
[7]   Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon [J].
Kimura, T ;
Isshiki, H ;
Ishida, T ;
Shimizu, T ;
Ide, S ;
Saito, R ;
Yugo, S .
JOURNAL OF LUMINESCENCE, 2003, 102 :156-161
[8]   ELECTROCHEMICAL ER DOPING OF POROUS SILICON AND ITS ROOM-TEMPERATURE LUMINESCENCE AT SIMILAR-TO-1.54 MU-M [J].
KIMURA, T ;
YOKOI, A ;
HORIGUCHI, H ;
SAITO, R ;
IKOMA, T ;
SATO, A .
APPLIED PHYSICS LETTERS, 1994, 65 (08) :983-985
[9]   Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation [J].
Komuro, S ;
Maruyama, S ;
Morikawa, T ;
Zhao, XW ;
Isshiki, H ;
Aoyagi, Y .
APPLIED PHYSICS LETTERS, 1996, 69 (25) :3896-3898
[10]  
NAMAVAR F, 1995, J APPL PHYS, V77, P77