Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

被引：67

作者：

Nishida, T ^{[1
]}

Saito, H ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1338964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Over 0.1 mW ultraviolet output was achieved by an AlGaN-based light-emitting diode. To realize a highly conductive and ultraviolet-transparent layer, a short-period alloy superlattice was introduced. The device was fabricated on SiC substrate. Low electric resistivity due to the short-period alloy superlattice and the high thermal conductivity of the SiC substrate enabled large current injection of up to 1.7 kA/cm(2). The emission was monochromatic band-edge emission about 350 nm in wavelength without significant D-A and/or deep emissions. (C) 2001 American Institute of Physics.

引用

页码：399 / 400

页数：2

共 8 条

[1] AlGaN/GaN quantum well ultraviolet light emitting diodes
Han, J
Crawford, MH
Shul, RJ
Figiel, JJ
Banas, M
Zhang, L
Song, YK
Zhou, H
Nurmikko, AV
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (12) : 1688 - 1690
[2] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells
Im, JS
Kollmer, H
Off, J
Sohmer, A
Scholz, F
Hangleiter, A
[J]. PHYSICAL REVIEW B, 1998, 57 (16) : R9435 - R9438
[3] Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
Kinoshita, A
Hirayama, H
Ainoya, M
Aoyagi, Y
Hirata, A
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 175 - 177
[4] Nishida T, 1999, PHYS STATUS SOLIDI A, V176, P45, DOI 10.1002/(SICI)1521-396X(199911)176:1<45::AID-PSSA45>3.0.CO
[5] 2-0
[6] Nishida T, 2000, IPAP CONFERENCE SER, V1, P872
[7] Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate
Otsuka, N
Tsujimura, A
Hasegawa, Y
Sugahara, G
Kume, M
Ban, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (5B): : L445 - L448
[8] Wetzel C, 1998, MATER RES SOC SYMP P, V482, P489

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