Exciton transfer in asymmetric double quantum wells: The one-LO phonon process

被引：10

作者：

Michl, FC ^{[1
]}

Winkler, R ^{[1
]}

Rossler, U ^{[1
]}

机构：

[1] UNIV REGENSBURG,INST THEORET PHYS,D-93040 REGENSBURG,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 99卷 / 01期

关键词：

semiconductors; quantum wells; tunnelling;

D O I：

10.1016/0038-1098(96)00272-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose a novel mechanism for the transfer of excitons as an entity through barriers in quantum well structures, namely by the emission of a single longitudinal optical (LO) phonon. The process arises from a combination of the Frohlich coupling of electrons and holes to the LO phonons and the admixture of different subband states to the wave function of the excitons due to the Coulomb interaction. For the case of an asymmetric double quantum well, a numerical calculation of the resulting relaxation rates is given. We show that the process can dominate over the separate transfer of electrons and holes. Copyright (C) 1996 Published by Elsevier Science Ltd

引用

页码：13 / 18

页数：6

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