Field effects on SnOx and SnO2 nanoparticles synthesized in the gas phase

被引：3

作者：

Chowdhury, Dibakar Roy

Aruna, Ivaturi

Nedic, Aleksandar

Kruis, Frank Einar

Schmechel, Roland

机构：

[1] Univ Duisburg Essen, Fac Engn, D-47057 Duisburg, Germany

[2] Univ Duisburg Essen, CeNIDE, D-47057 Duisburg, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 09期

关键词：

Nanoparticle; X-ray photoelectron spectroscopy; Field effect transistor; Stoichiometry; Gas phase synthesis; THIN-FILM TRANSISTORS; OXIDE; TRANSPARENT; DEPOSITION; NANOBELTS; TRANSPORT; NANOWIRES;

D O I：

10.1016/j.physe.2010.06.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The present study reports for the first time the influence of stoichiometry of SnO2 nanoparticles synthesized in the gas phase at atmospheric pressure towards the field effect behaviour. The field effect was measured by using the nanoparticles as active material in a transistor channel. The transistors fabricated from the stoichiometric SnO2 nanoparticles (similar to 20 nm) obtained by post-deposition low-temperature (300 degrees C) oxidation of the SnO nanoparticles clearly demonstrate n-type behaviour in contrast to the high electrical conductance exhibited by the non-stoichiometric SnOx nanoparticles obtained by high temperature (650 degrees C) in-flight oxidation. X-ray Photoelectron Spectroscopy (XPS) studies confirm the stoichiometry of the in-flight as well as the post-oxidized nanoparticles. Published by Elsevier B.V.

引用

页码：2471 / 2476

页数：6

共 18 条

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