Femtosecond laser assisted growth of ZnO nanowires

被引：74

作者：

Zhang, YF

Russo, RE

Mao, SS ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 13期

关键词：

D O I：

10.1063/1.2061858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystalline ZnO nanowires were grown by the pulsed laser deposition (PLD) approach using a femtosecond laser as the ablation source. As determined by electron microscopy, the femtosecond PLD grown ZnO nanowires showed good crystalline characteristics and reasonably uniform diameters, which can be attributed to the homogeneity of femtosecond laser produced precursor vapor in which micron sized particulates are minimal. Photoluminescence spectroscopy measurements indicated a low threshold for lasing at room temperature. In addition, we examined the influence of oxygen partial pressure during the PLD growth process on the morphology and photoluminescence property of ZnO nanowires. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 16 条

[1]

[Anonymous], 2002, INT J NANOSCI

[2]

Chrisey D. B., 1994, PULSED LASER DEPOSIT

[3] Diameter-selective synthesis of semiconductor nanowires [J].