Synthesis of ultra-long hollow chalcogenide nanofibers

被引:21
作者
Lee, Kun-Jae [1 ,2 ]
Song, Hanbok [1 ]
Lee, Young-In [1 ]
Jung, Hyunsung [2 ]
Zhang, Miluo [2 ]
Choa, Yong-Ho [1 ]
Myung, Nosang V. [2 ]
机构
[1] Univ Calif Riverside, Dept Chem & Environm Engn, Riverside, CA 92521 USA
[2] Hanyang Univ, Dept Fine Chem Engn Bionano Technol, Ansan 426791, South Korea
基金
新加坡国家研究基金会;
关键词
GALVANIC DISPLACEMENT; ELECTROSPINNING TECHNIQUE; METAL NANOSTRUCTURES; OPTICAL-PROPERTIES; ARCHITECTURE; NANOWIRES; NANOTUBES; INTERIORS; GAAS;
D O I
10.1039/c1cc12312b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electrospinning and galvanic displacement reaction are combined to fabricate ultra-long hollow chalcogen and chalcogenide nanofibers in a cost-effective and high throughput manner. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions and morphology, thereby imparting control over the composition and shape of the nanostructures evolved during galvanic displacement reaction. It is believed to be a general route to form various ultra-long hollow semiconducting nanofibers.
引用
收藏
页码:9107 / 9109
页数:3
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