Properties of HfO2/Hf-silicate/Si structures with Hf-silicate formed by Hf metal deposition and subsequent reaction

被引：4

作者：

Bae, G

Lee, H

Jung, DG ^{[1
]}

Kang, HS

Roh, Y

Yang, CW

机构：

[1] Sungkyunkwan Univ, Dept Phys, Brain Korea 21 Phys Res Div, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Sch Elect & Comp Engn, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, Sch Met & Mat Engn, Suwon 440746, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 8A期

关键词：

gate dielectrics; HfO2; Hf-silicate; equivalent oxide thickness; leakage current;

D O I：

10.1143/JJAP.40.L813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of the HfO2/Hf-silicate/Si structure with the Hf-silicate layer which was formed by Hf metal deposition On Si and subsequent reaction of Hf with Si and oxygen during the HfO2 deposition were studied. Post-deposition N-2 annealing reduced the equivalent oxide thickness (EOT) value and improved leakage characteristics Of the HfO2/Hf-silicate/Si structure. The EOT value was reduced from 2.70 nm to 2.23 nm after annealing. At a proper voltage of 2.5 V, which was defined as the difference between the applied gate bias and the flat band voltage, the leakage current density of annealed HfO2/Hf-silicate/Si structure was 1.88 x 10(-7) A/cm(2) while that of as-formed HfO2/Hf-silicate/Si structure was 1.92 x 10(-6) A/cm(2). The breakdown field increased from 7.29 MV/cm to 9.71 MV/cm after annealing.

引用

页码：L813 / L816

页数：4

共 19 条

[1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].