Design and fabrication of liquid phase epitaxy system

被引：8

作者：

Venkataraghavan, R ^{[1
]}

Udayashankar, NK ^{[1
]}

Rodrigues, BV ^{[1
]}

Rao, KSRK ^{[1
]}

Bhat, HL ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

BULLETIN OF MATERIALS SCIENCE | 1999年 / 22卷 / 02期

关键词：

liquid phase epitaxy; multi-bin boat; indium antimonide; surface morphology;

D O I：

10.1007/BF02745566

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The design and fabrication of a simple and versatile liquid phase epitaxial (LPE) system has been described. The present LPE system makes use of the horizontal multi-bin boat and slider arrangement which enables the growth of even multilayered structures. The growth chamber is heated by a single-zone resistive furnace precisely controlled through a Eurotherm 902P temperature programmer and controller. The vacuum manifolds and accessories are set up in such a way as to ensure high vacuum needed for growth experiments. The provision is also made to admit high purity gases like hydrogen or nitrogen into the growth chamber. The design has been kept simple without sacrificing the versatility and adaptability for novel growth experiments. The typical films grown by this LPE system are also presented.

引用

页码：133 / 137

页数：5

共 18 条

[11] LIQUID-PHASE EPITAXY [J].

KUPHAL, E .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (06) :380-409

[12] Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers [J].

Liu, WK ;

Winesett, J ;

Ma, WL ;

Zhang, XM ;

Santos, MB ;

Fang, XM ;

McCann, PJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) :1708-1714

[13] INGAAS/INASPSB DIODE-LASERS WITH OUTPUT WAVELENGTHS AT 2.52-MU-M [J].

MARTINELLI, RU ;

ZAMEROWSKI, TJ .

APPLIED PHYSICS LETTERS, 1990, 56 (02) :125-127

[14] 3.06 MU-M INGAASSB/INPSB DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MENNA, RJ ;

CAPEWELL, DR ;

MARTINELLI, RU ;

YORK, PK ;

ENSTROM, RE .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2127-2129

[15]

NELSON H, 1963, RCA REV, V24, P603

[16] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2 [J].

PANISH, MB ;

HAYASHI, I ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :326-&

[17] HIGH-PERFORMANCE GALNASSB/GASB P-N PHOTODIODES FOR THE 1.8-2.3 MU-WAVELENGTH RANGE [J].

SRIVASTAVA, AK ;

DEWINTER, JC ;

CANEAU, C ;

POLLACK, MA ;

ZYSKIND, JL .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :903-904

[18]

UDAYASHANKAR NK, 1999, PHYS STATUS SOLIDI

← 1 2 →