Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

被引：21

作者：

Bell, A

Harrison, I

Korakakis, D

Larkins, EC

Hayes, JM

Kuball, M

Grandjean, N

Massies, J

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[4] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.1327288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the deep level band (2.0-3.0 eV). Power resolved measurements indicate that the 3.424 eV emission is a donor-acceptor pair transition. In the deep level region peaks are observed in all spectra at 2.3 and 2.6 eV. This suggests that the 2.3 and 2.6 eV peaks are related and a model is proposed to explain this luminescence. (C) 2001 American Institute of Physics.

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页码：1070 / 1074

页数：5

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