Etch rates for micromachining processing

被引：415

作者：

Williams, KR

Muller, RS

机构：

[1] Berkeley Sensor and Actuator Center, University of California at Berkeley, Berkeley

[2] University of California, Berkeley, CA

[3] Eastman Kodak Company, Altera Corporation

[4] Stevens Institute of Technology, Hoboken, NJ

[5] California Institute of Technology, Pasadena, CA

[6] Dept. of Elec. Eng. and Comp. Sci., University of California, Berkeley, CA

[7] National Academy of Engineering, Advisory Committee

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 1996年 / 5卷 / 04期

关键词：

D O I：

10.1109/84.546406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H3PO4, HNO3 + H2O + NH4F, KOH, Type A aluminum etchant, H2O + H2O2 + HF, H2O2, piranha, acetone, HF vapor, XeF2, and various combinations of SF6, CF4, CHF3, Cl-2, O-2, N-2, and He in plasmas) were measured and are tabulated, Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials.

引用

页码：256 / 269

页数：14

共 71 条

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