Synthesis of diamond by thermal plasma processing under low pressure

被引:4
作者
Sakiyama, S [1 ]
Fukumasa, O [1 ]
机构
[1] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan
关键词
diamond synthesis; plasma jet; thermal plasma; chemical vapor deposition; spectroscopic measurement; plasma processing; medium pressure;
D O I
10.2320/jinstmet1952.63.1_55
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
To realize the large area deposition of diamond films at a high rate, synthesis of diamond with the use of plasma jets under medium pressure, which are in the transition region from thermal plasmas to cold plasmas, is studied. Under low pressure, the morphology of deposited particles strongly depends on the ratio of methane gas flow rate to hydrogen gas flow rate, CH4/H-2, and on the distance from the feed ring exit to the substrate, L. The euhedral diamond particles are synthesized when CH4/H-2 is lower and L is shorter. To clarify the relationship between the morphology of the prepared particles and the chemical species in the plasma jet, emission spectra from the plasma jet have been studied. The spectra of the Balmer series of hydrogen, hydrocarbons and dicarbon have attracted special interest. Among these spectra, the spectral intensity ratio of CH to H-alpha at 1 mm above the substrate has a strong correlation with the quality of synthesized diamond and its deposition area.
引用
收藏
页码:55 / 61
页数:7
相关论文
共 12 条
[1]   UNIFORM AND LARGE-AREA DEPOSITION OF DIAMOND BY CYCLIC THERMAL PLASMA CHEMICAL-VAPOR-DEPOSITION [J].
EGUCHI, K ;
YATA, S ;
YOSHIDA, T .
APPLIED PHYSICS LETTERS, 1994, 64 (01) :58-60
[2]  
Hirata A., 1994, Journal of the Japan Society of Precision Engineering, V60, P591, DOI 10.2493/jjspe.60.591
[3]   HIGH-RATE SYNTHESIS OF DIAMOND BY DC PLASMA-JET CHEMICAL VAPOR-DEPOSITION [J].
KURIHARA, K ;
SASAKI, K ;
KAWARADA, M ;
KOSHINO, N .
APPLIED PHYSICS LETTERS, 1988, 52 (06) :437-438
[4]   DIAMOND SYNTHESIS BY DC THERMAL PLASMA CVD AT 1 ATM [J].
LU, ZP ;
STACHOWICZ, L ;
KONG, P ;
HEBERLEIN, J ;
PFENDER, E .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1991, 11 (03) :387-394
[5]   DIAMOND DEPOSITION USING AN X-Y STAGE IN A DC PLASMA-JET CHEMICAL VAPOR-DEPOSITION [J].
MATSUMOTO, S ;
MANABE, Y ;
HIBINO, Y .
JOURNAL OF MATERIALS SCIENCE, 1992, 27 (21) :5905-5910
[6]   SUBSTRATE BIAS EFFECT ON DIAMOND DEPOSITION BY DC PLASMA-JET [J].
MATSUMOTO, S ;
HOSOYA, I ;
CHOUNAN, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :2082-2086
[7]  
OHTAKE N, 1990, J ELECTROCHEM SOC, V137, P718
[8]   Large-area diamond deposition by microwave plasma [J].
Ralchenko, VG ;
Smolin, AA ;
Konov, VI ;
Sergeichev, KF ;
Sychov, IA ;
Vlasov, II ;
Migulin, VV ;
Voronina, SV ;
Khomich, AV .
DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) :417-421
[9]   A PLASMA REACTOR BASED ON THE FORCED CONSTRICTED TYPE DC PLASMA-JET AND ITS APPLICATION TO THERMAL PLASMA PROCESSING IN LOW-PRESSURE [J].
SAKIYAMA, S ;
HIRABARU, T ;
FUKUMASA, O .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (04) :2408-2410
[10]   SYNTHESIS OF DIAMOND USING LOW-PRESSURE PLASMA-JET [J].
SAKIYAMA, S ;
FUKUMASA, O ;
AOKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B) :4409-4412