SYNTHESIS OF DIAMOND USING LOW-PRESSURE PLASMA-JET

被引：5

作者：

SAKIYAMA, S

FUKUMASA, O

AOKI, K

机构：

[1] Department of Electrical and Electronic Engineering, Yamaguchi University, Ube

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7B期

关键词：

DIAMOND SYNTHESIS; CHEMICAL VAPOR DEPOSITION; PLASMA JET; THERMAL PLASMA; PLASMA PROCESSING;

D O I：

10.1143/JJAP.33.4409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With the use of the forced constricted type plasma jet, the synthesis of diamond is attemped under low pressure, in order to realize large area deposition at a high rate. The effect of the ambient gas pressure on the deposition rate and deposition area of the film is studied. It is clarified that the deposition area is extended markedly with decreasing gas pressure. Furthermore, diamond films are successfully synthesized without the large decrease of the deposition rate, even at 5 Torr.

引用

页码：4409 / 4412

页数：4

共 9 条

[1]

FUKUMASA O, 1992, T IEE JPN A, V112, P269

[2]

Hirose Y., 1988, 1ST INT C NEW DIAM S, P38

[3]

KAMO M, 1983, J CRYST GROWTH, V62, P624

[4] GROWTH OF DIAMOND PARTICLES FROM METHANE-HYDROGEN GAS [J].